Intel and Micron extended their manufacturing technology lead today with the mass production of their 64-gigabit (Gb) 20 nanometer (nm) NAND flash memory and introduction of the world’s first 20nm 128Gb die, that will allow a terabit of data to be stored in a finger-tip size package. These products are ideal for tablets, smartphones, solid-state drives and other high-performance compute devices. Both announcements set new industry benchmarks and were enabled through manufacturing process innovations including a new planar cell structure and Hi-K metal gate stack, both NAND industry firsts.
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