Intel and Micron First to Deliver Sub-40 Nanometer NAND Flash Memory Device

SANTA CLARA, Calif and BOISE, Idaho, May 29, 2008 – Today Intel Corporation and Micron Technology, Inc. introduced the industry’s first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process technology was jointly developed by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT). It is the smallest NAND process geometry on the market. The 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing a cost-effective path to higher densities in existing applications. Shipments of customer samples begin in June and mass production is expected during the second half of this year calendar.

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