SANTA CLARA, Calif and BOISE, Idaho, May 29, 2008 – Today Intel Corporation and Micron Technology, Inc. introduced the industry’s first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process technology was jointly developed by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT). It is the smallest NAND process geometry on the market. The 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing a cost-effective path to higher densities in existing applications. Shipments of customer samples begin in June and mass production is expected during the second half of this year calendar.
Intel (NASDAQ: INTC), a leader in the semiconductor industry, is shaping the data-centric future with computing and communications technology that is the foundation of the world’s innovations. The company’s engineering expertise is helping address the world’s greatest challenges as well as helping secure, power and connect billions of devices and the infrastructure of the smart, connected world – from the cloud to the network to the edge and everything in between. Find more information about Intel at newsroom.intel.com and intel.com.
Intel and the Intel logo are trademarks of Intel Corporation in the United States and other countries.
*Other names and brands may be claimed as the property of others.